ECRI Microelectronics

HMSK4300 high reliaility pulse width modulation amplifiers

1. Features

75V volt of motor power supply

10A output current converter capability,All N channel MOS-FET Output bridge type
100% dead-high transmission capacity
Suitable for DC to 100KHZ AC PWM
Short down/cross conduct protection
Protection for under-voltage lockout
Control for programmable dead-time
Control for active shutoff by low level
Isolated package design provides high voltage insulation and excellent heat transmission performance
Working for optional three-foot bending

2. Applications of HMSK4300 Isolation of Square wave Drive

Three-phase brushless DC;Servo controller;Three-phase brushless AC;Cooling fin actuator control;Induction motor control;Air conditioning fan speed control.

3. Description of HMSK4300 Isolation of Square wave Drive

HMSK4300 is a three-phase bridge with a gate, sealled by the metal package, can output for 10A, the maximum voltage supply can reach to DC 75V. The signal voltage has under-voltage lockout protection, cross-conduction control, user-programmable dead time control and short-circuit limiting. In addition, the bridge output can be controlled by using low level shutoff. Due to the isolation technology of HMSK4300’s package, it can make the internal MOSFET has better heat transfer performance and allows directly contact with the device and fin actuator without an insulating material.
This series of products are made of thick film hybrid integrated process, metal sealed package. Product design and manufacturing meet the requirements of MIL-STD and detailed specifications, the quality level is H-class.

4. Technical Specifications of HMSK4300 Isolation of Square wave Drive

Table 2 Electrical Characteristic

Parameter

Test condition

A group④

MSK4300H③

MSK4300②

Unit

Control choice



min

Typical

max

min

Typical

max


Static bias current

Shut off all the input

1,2,3


2.5

8


2.5

8

mA

Working current

Frequency=20KHZ,50% duty cycle

1,2,3


12.5

15


12.5

15

mA

Undervoltage threshold value(decline)


1

5.75

6.6

7.5

5.75

6.6

7.5

V

Undervoltage threshold value (rise)


1

6.2

7.1

8

6.2

7.1

8

V

Low level input voltage①


-

-

-

0.8

-

-

0.8

V

High level input voltage①


-

2.7

-

-

2.7

-

-

V

Low level input current①

VIN=0V

-

60

100

135

60

100

135

Microampere

High level input current①

VIN=5V

-

-1

-

+1

-1

-

+1

Microampere

Output bridge

Drain-source breakdown voltage

ID=25μA, shut off all the input

-

70

-

-

70

-

-

V

Drain-source leakge current

VDS=70V

-

-

-

25

-

-

25

Microampere

Drain-sourceturn-on resistance(each FET)

ID=10A

1

-

-

0.3

-

-

0.3

Ohm

Drain-sourceturn-on resistance (FET,just forthermal calculation)①


-

-

-

0.16

-

-

0.16

Ohm

Switching characteristic

Rise time

V+=30V,RL=3Ω

-

5

-

-

5

-

Nanosecond


Decline time

ID=10A

-

-

-

-

6

-

Nanosecond


Conduction delay(down)

SWR resistance=∞

4

-

0.5

2

-

0.5

3

Microsecond

Shut off delay(down)

SWR resistance=∞

4

-

5

8

-

5

10

Microsecond

Conduction delay(up)

SWR resistance=∞

4

-

5

8

-

5

10

Microsecond

Shut off delay(up)

SWR resistance=∞

4

-

0.5

2

-

0.5

3

Microsecond

Dead time

SWR resistance=∞

4

6

7

8

6

7

8

Microsecond

Dead time

SWR resistance 12K

4

0.3

0.5

0.7

0.3

0.5

0.7

Microsecond

Source –Drain diode characteristics

Forward voltage①

ISD=10A

-

-

1.05

1.25

-

1.05

1.25

V

Reverse recover time①

ISD=10A,di/dt=100A/μS

-

-

75

-

-

75

-

Nanosecond


5. Pin Designations of HMSK4300 Isolation of Square wave Drive

Table 3 Pin Designations

Pin

Symbol

Designation

Pin

Symbol

Designation

1

BH′

B channel high-level logic signal input

6

VBIAS

Power supply for gate Drive

2

BL

B channel low-level logic signal input

7

EN′

Working enable for system

3

AL

A channel low-level logic signal input

8

CL

C channel low-level logic signal input

4

AH′

A channel high-level logic signal input

9

CH′

C channel high-level logic signal input

5

SWR′

Dead time control

10

GND

GND

11

Three-phase bridge C channel output

12

RSENSE

Power GND

13

RSENSE

Power GND

14

Three-phase bridge A channel output

15

V+

+28V

16

V+

Connect +28V

17

Three-phase bridge B channel output

18

NC

suspend


6. Circuit block diagram of HMSK4300 Isolation of Square wave Drive

Pulse width modulation amplifier includes signal processing circuit、half-bridge driver circuit and power amplifier.
Circuit block diagram
Figure 2  Single channel working block diagram

A triangle wave signal is generated by input control signal and square wave generator circuit , the effect of triangle wave signal and fixed level can generate width modulated square wave signal. Drive circuit can make isolation and distribution for the front width modulated square wave signal, then drive the power tubes, to make power amplifier and drive load for DC motor.

7. Typical Connection Diagram of HMSK4300 Isolation of Square wave Drive


Typical Connection Diagram
Figure 3  HMSK4300 connection diagram

8. Package Specifications of HMSK4300 Isolation of Square wave Drive


Package Specifications

Package Specifications
Figure 5 Package outline drawing

Application Notes please refer to the appendix, must read it carefully.
Model Series Function Max.Input Vol Max Current
HSA400 Series Pulse Width Modulation Amplifiers BRUSHED DC MOTOR CONTROLLER 80V 5A
HSA06 Series Pulse Width Modulation Amplifiers BRUSHED DC MOTOR CONTROLLER 100V 30A
HSA03 Series Pulse Width Modulation Amplifiers BRUSHED DC MOTOR CONTROLLER 100V 30A
HSA04 Series Military Pulse Width Modulation Amplifiers BRUSHED DC MOTOR CONTROLLER 200V 20A
HMSK4203 High Efficiency Pulse Width Modulation Amplifiers BRUSHED DC MOTOR CONTROLLER 75V 10A
HSA12 Large Current Pulse Width Modulation Amplifiers BRUSHED DC MOTOR CONTROLLER 200V 20A