ECRI Microelectronics

Thin film Microwave power amplifier

As the final stage of the transmitter, the power amplifier amplifies the modulated frequency band signal to the required power, ensuring that sufficient level signals can be received within the coverage area. Taking the x-band pulse amplifier and s-band continuous wave amplifier developed by 43 as examples (FIG. 12), the main process level and index level of the product are described. Microwave amplifiers can be separately proposed indicators, independent modular design, we can provide user indicators based on the design and manufacturing package.
After adopting the thin-film process (the finished parts adopt bare chips), the volume is greatly reduced, for example, the volume can be changed from 20 x 35 x 10mm3 to 10 x 20 x 10mm3.
Table 10. Electrical characteristics of x-band pulse power amplifier

characteristics

symbol

Condition

Operating frequency range:f= x.1GHz±0.5 GHz;

The input power:7dBm;Work pulse width:1mS

Limit value

Unit

Min

Max

Output power

Pout


33

-

dBm

duty cycle



-

25%




Table 11 S-band continuous wave power amplifier electrical characteristics

characteristics

symbol

Condition

Operating frequency range:f= x.2GHz±0.1 GHz;The input power:10±2dBm

Limit value

Unit

Min

Max

Output power

Pout


37

-

dBm

Gain flatness

ΔG


-

2

dB

Harmonic suppression

H1


65

-

dBc

spurious suppression

S1-1


65

-

dBc

Working current

I


-

2.0

A


Thin film Microwave power amplifier
Model Series Max. Output Power (W) Input DC Voltage (V) Output Voltage (V)