ECRI Microelectronics

Thin Film

Thin Film

High accuracy and reliable thin film products

ECRIM has thin film hybrid integrated circuit through the national army standard production line. It also has the world's advanced magnetron sputtering film forming equipment, high precision laser resistance machine, lithography machine, plasma etching machine, gold wire ball welding machine and so on. Based on thin film process, it designs and develops thin film process products and hybrid integrated signal processing circuits. Over the past 40 years, ECRIM has developed a large number of high-precision and high-quality thin film technology and circuit products for supporting national key engineering projects. Main products are various thin film resistance network, microwave substrate, precision signal processing circuit, high density hybrid integrated circuit and so on.

high-accuracy-and-reliable-thin-film-products high-accuracy-and-reliable-thin-film-products-1

Thin film process product
  • Precision thin film resistance: accuracy: ±0.1%~±0.02%
  • Temperature coefficient: ≤±25 ppm/℃
  • Thin film ceramic metallization and microwave substrate:
  • Base material: aluminum oxide, aluminum nitride, quartz etc
  • Precision: line accuracy ±2.5μm, minimum line width and spacing 20μm
  • Frequency range: DC~110G
Thin film attenuator: High frequency to 26GHz, low standing wave, high attenuation accuracy
hybrid-integrated-signal-circuit-1 hybrid-integrated-signal-circuit-1
hybrid-integrated-signal-circuit-3 hybrid-integrated-signal-circuit-4

Hybrid integrated signal circuit

hybrid-integrated-signal-circuit-5

Sensor servo circuit: preamplifier, temperature converter, charge amplifier, MEMS accelerometer and MEMS gyroscope.

  • Isolation type circuit: signal isolation or power supply isolation, isolation amplifier
  • Precision reference source: small voltage, current reference, the I/F
  • Photoelectric circuit: hybrid integrated optical fiber photoelectric conversion, transmission module
  • Microwave circuit: P/L/C/S/X-band channels, medium and low power amplifier
  • Custom circuit: all kinds of high-precision signal conversion, drive circuit, a dedicated circuit miniaturization
The product quality meets the quality grade and reliability assessment requirements specified in GJB2438A-2002, and the highest quality grade reaches the aerospace grade (K grade).

Microwave components, circuit products and miniaturization technology

---------ECRIM
Based on thin film technology, the ECRIM business division, mainly designs and develops high-performance film passive components, including microstrip filter, power divider, attenuator, microwave substrate, etc.; Active modules include L, S, C, x-band hybrid integrated low noise amplifier, mixer, oscillator, power amplifier, radio frequency channel, LC filter, harmonic generator and other products. We also customize components and components for customers. Products are widely used in wireless communication, navigation, radar and other aerospace, aviation, ground systems. It has a production line of 250,000 square inch microwave substrates and 30,000 high-end hybrid integrated circuit thin films.

Thin film technology, due to its high-precision manufacturing process and highly stable microwave characteristics, has obvious advantages over PCB and other processes in the field of radio frequency. It has fine lines, high integration and good heat dissipation. It can produce high power density circuits, especially in airborne, projectile, satellite and some high-end radio frequency systems. Its features of small size, light weight and high reliability are more prominent.

1. Thin film technology and products
Thin film technology products are characterized by high precision, high density, high frequency and high reliability, which are widely used in the fields of hybrid integrated circuit interconnect substrate, microwave devices, photoelectric communication, sensor, MCM, LED and so on. Typical products include microwave substrate, microstrip filter, attenuator, thin film precision resistance (network), etc.
fig-1-typical-thin-film-circuit-structure

1.1thin film microwave substrate
  • overview
The main matrix material of the film microwave substrate is alumina ceramics. We can provide customers with customized services, such as aluminum nitride base and quartz base microwave base plate processing.
  • Process description

Film system

Typical floor resistance

50-75-100Ω/□

Typical thickness of transition layer

1000~3000Å

Surface metal thickness

3~8μm

Lithography

Resolution ratio

0.8μm

Registration accuracy

±1μm

Double exposure, thick adhesive exposure

Scribing

Minimum cut size

0.5mm×0.5mm

Dimensional accuracy

±50μm

Unit alignment accuracy

±5μm

Process capability

The 2″×2″ substrate can produce 800 pieces/week



Product appearance

thin-film-microwave-substrate-product-appearance thin-film-microwave-substrate-product-appearance-1

1.2 Thin film precision resistance and network
  • Overview
Precision thin film resistance (resistance network) is a chip thin film resistance (resistance network) with high resistance value tracking accuracy and small volume. It has the advantages of high resistance value precision, low resistance temperature coefficient, low noise and good long-term stability. It is suitable for the fields of aerospace, aviation and implantation of human medical devices. The precision can be up to 0.01%, the temperature tracking coefficient up to 0.02%, and arbitrary resistance values can be customized according to customer requirements, and the packaging can be in the form of chip table sticker, ceramic package, package package, etc.
  • Technical specification of resistance and resistance network




precision resistance

Resistance materials

Nickel chrome

Temperature coefficient TCR(ppm/℃):±25--±5

Tantalum nitride

Temperature coefficient TCR(ppm/℃):-100---50

Substrate materials

glass ceramics/silicon slice/aluminum oxide/aluminum nitride

Accuracy

±0.1% --  ±0.02%

Passivation layer structure

SiO2+Si3N4、SiO2

Size

0404、0603、0805、1206

Resistance range

10Ω—1MΩ

Power

25 mW–100 mW

Operating temperature range

-65℃--125℃


Precision resistance network

Accuracy

±0.1% --  ±0.02%

Relative accuracy

±0.02%

Temperature tracking coefficient accuracy

±0.02%--±0.05%

Size

Design according to the detailed drawing

Packaging form

We can use the chip table sticker, ceramic package and packaging as the customers demand.

Temperature coefficient

±10ppm

Operating temperature range

-65℃--125℃

Antistatic capacity

1500V-2000V



Product appearance

thin-film-precision-resistance-and-network-product-appearance


1.3 Capacitance of thin film chip
  • Overview
Thin-film chip capacitors are suitable for rf, microwave and millimeter wave applications. Suitable frequency: 100MHz ~ 100GHz, capacity: 50-4300pf. Pt/Au coating, suitable for welding.
The key technical indexes
Table 2 Main technology indexes

Size:W×L

10×10mils to 90×90mils

(0.25×0.25mm to 2.25×2.25mm)

thickness:t

6mils±1mil&10mils±1mil

(0.150mm±0.025mm&0.250mm±0.025mm)

Electrode

Ti/Pt/Au  Ti/Ni/Au

The rated voltage (RWV)

50V for t=6mils(0.150mm)

100V for t=10mils(0.250mm)

Capacitance

50pF to 1000pF(nominal@+25℃ & 1kHz)

Capacity tolerance

M=±20%

Z=-20%/+80%

V=-0%/+100%

Loss Coefficient(DF)

<2.5%(@+25℃ & 1kHz)

Insulation resistance(IR)

>1010Ω

Dielectricbreakdown voltage(DWV)

RWV×2.5(minimum DWV @+25℃)


Typical product appearance drawing

typical-product-appearance-drawing

1.4Thin film attenuator
  • Overview
The film attenuator has low parasitic parameters and high frequency of use up to 18GHz. Moisture-proof, forming self-passivating protective film; Suitable for bonding of gold wire. Widely used in radio frequency microwave millimeter wave communication, optical communication and other fields.

At present, we have developed 6 series of attenuation sheets with over 100 varieties. The following is an example of AT150504-X attenuator:
  • The key technical indexes
Table 3 main technical indicators

applicable frequency

characteristic impedance

standing wave

operating temperature

Size

Power

DC~18GHz

50±1Ω

≤1.2

-55~125℃

15.8*5*0.4

1



Table 4 Attenuation accuracy

Attenuation

Working frequency

Attenuation accuracy

1~10dB

20dB

30dB

40dB

50dB

60dB

DC~18GHz

±0.3dB

±0.5dB

±0.5dB

±0.7dB

±1dB

±1dB


The attenuation can be adjusted according to customer's demand.
  • Typical product appearance drawing
typical-product-appearance-drawing-2

1.5 Coaxial attenuator
  • Overview
The main indicators of this series of coaxial fixed attenuator refer to the bw-s1w2 + series of MINI company. With frequency DC ~ 18GHz and maximum input power of 2W, it has the following characteristics: wide working frequency band, low standing wave ratio, flat attenuation, strong impulse resistance and burning resistance.
  • Schematic circuit diagram
schematic-circuit-diagram
  • The key technical indexes
Table 5 The key technical indexes(A case study of 1dB)

the-key-technical-indexes

Table 6 Typical parameter
table-6-typical-parameter

After testing and comparison, the attenuation accuracy index of this series of attenuators is similar to that of MINI company's products, and standing-wave ratio is better than MINI company's products.
  • Size
table-6-typical-size
  • Typical product appearance drawing
typical-product-appearance-drawing-3


Bm-w2c1, bm-w2c2, bm-w2c3, bm-w2c4, bm-w2c5, bm-w2c6, bm-w2c7, bm-w2c8, bm-w2c9 and bm-w2c10 are respectively named according to the power and attenuation.

1.6 The design guide
Selection of ceramic substrates
Table 7 Selection of main parameters of ceramic substrate

Substrate parameters

Influence

Instructions

Thickness

upper frequency limit

Different frequency choose different thickness

minimum-value aperture

50um

Dielectric constant

line width

It depends on the device performance

Surface roughness

Width of thinnest line

line width: 10um

Dissipation factor

Insertion loss

General requirements loss is less than 0.0005

Thermal conductivity

Power dissipation

Aluminum nitride/beryllium oxide for high power applications


Rules for thin film circuit design
Table 8 Common reference indicators for thin film circuit design rules

project

meaning

Typical values

Special requirements

Size of substrates and chips

2 inches substrates,Usable area

46×46

48×48

Toleranceof substrate thickness

±0.050mm

±0.020mm

Toleranceof chips size

±0.050mm

(+0,-0.050mm)

Scribing and its accuracy

Number of available cutting

0.15mm,0.20mm

0.10mm

cutting accuracy

±0.050mm


The conduction band

Minimum line width

0.018mm

0.010mm

The smallest seam width

0.018mm

0.010mm

A typical distance from the edge of the chip

0.050mm

0.000mm

The line drawing of special guide should be narrower than the designed size

0.004mm


resistance

Minimum line width

0.050mm

0.008mm

Minimum line length

0.050mm


Minimum blank distance between the resistance edge and the conductor

0.025mm

0.000mm

Minimum contact distance between resistance and conductor

0.050mm


The minimum distance of the resistance film from the chip edge

0.050mm


Metal hole

The smallest aperture

50um


The minimum distance from the edge of the hole to the edge of the figure

80um


Minimum spacing

100um


The minimum distance from the hole center to the edge of the chip

75um



2 Radio frequency channel miniaturization products
The miniaturization technology of microwave hybrid integrated circuit in thin film division focuses on local circuit design, modularization, miniaturization, structural packaging, improvement of consistency and reliability. The original rf channel products are miniaturized by the thin-film technology, that is, some circuits in the rf channel are processed with higher precision and better reliability by the thin-film technology, which is encapsulated in the shielding metal air-tight enclosure with good heat dissipation by the high-density assembly method.

The following is an example of an l-band radio frequency channel and its miniaturization technology. This type of product index is closely related to antenna index, data processing and other system requirements, and mainly develops in cooperation with users.

2.1 Technical characteristic
Rf channel schematic diagram
radio-frequency-channel-miniaturization-products
RF antenna array is divided into GNSS channel and XXX channel. The GNSS channel is a single channel designed with existing mature circuits. The RF channel of XXX is mainly composed of filter, low-noise amplifier, up-down converter, amplifier, clock module, frequency source and DC_DC power supply.

Radio frequency (RF) channel to channel phase consistency, consistency, isolation, gain phase stability have higher requirements, so the miniaturization of the thin film hybrid integrated process on how to send and receive passage, each channel by encapsulation structure consistent separation chamber, the channel module respectively complete RF signal amplification and frequency conversion, and other functions, in order to achieve the high demand.
Table 9 Radio frequency channel electrical characteristics

characteristics

symbol

Conditions

RF input frequency:xxxx.5MHz±10MHz;

RF input power:-130dBm~-40dBm

LO input frequency:xxxx MHz;

LO input power:0dBm

Limit value

Unit

Min

Max

Channel gain

G


45

55

dB

Gain consistency

ΔG


-

2

dB

Image rejection

S1


65

-

dBc

Harmonic suppression

H1


65

-

dBc

Working current

I


0.35

0.4

A

Noise Figure

NF



2.5


RF port standing wave ratio

VSWR


-

2

-

Phase consistency

ΔPh

TA=25℃

-5

5



2.2 Radio frequency channel miniaturization technology
radio-frequency-channel-miniaturization-technology-1

radio-frequency-channel-miniaturization-technology-2
  • Selection of components
Raw chip or micro-label encapsulated components are selected for hybrid integration to improve the integration degree and effectively reduce the circuit area.
  • Thin film substrate manufacturing
The environmental requirements for radio frequency channels are relatively high, and the base plate is required to ensure the dielectric constant while having higher thermal conductivity. The material selection and manufacturing are studied to meet the practical requirements.

(1)Substrate selection
Aluminum oxide (AL2O3) is usually selected for the substrate, which has the advantages of large dielectric constant, small dielectric loss, large insulation resistance, high mechanical strength, and close to the coefficient of thermal expansion of the package shell. Aluminum nitride (ALN) is preferred on the base plate of power device, with the dielectric constant of 8.7 and thermal conductivity of 200W/m•K. Ceramic substrates have many excellent properties, and they play a more important role than PCB in the field of microwave communication. With high dielectric constant of thin film substrate, can shrink the same electrical length microwave signal in the medium plate length and width of resistance attenuation network also can be directly generated on thin film substrate, thus greatly reducing the area of the original circuit, and improved the precision of attenuation at the same time, the existing module in, consistency, reliability, maintainability, scalability, etc, have certain ascend.

(2)Selection of conductive metal materials
Parts of the RF channel need to be assembled by welding process. The metal on the substrate is required to have good weld ability, weld ability and resistance and large current, so as to guarantee welding strength and reliability. In addition, the radio frequency circuit has requirements on the band impedance and skin depth of the radio frequency signal, so it adopts the method of gilding the micro strip line to meet the requirements of the radio frequency signal.

(3)Wire and through hole design
The key to high performance and repeatability in microwave structures is determined by the geometry of the metal and the characteristic impedance of the transmission line is determined by the width of the line. The whole RF channel has small volume, high wiring density and small wire width, so the precision requirements are very high. Metalized through-holes are commonly used to connect radio frequency signals to encapsulated areas, requiring better mechanical strength and lower electrical impedance.

fig-9
FIG 9

fig-10
FIG 10

  • Micro assembly technique
micro-assembly-technique
The single-channel module adopts welding technology to weld the substrate inside the cavity to ensure good grounding. The input and output interfaces, such as RF, TLO, RLO, IF, +VCC and -vcc, are respectively connected with the antenna and the system-level substrate.

Aimed at circuit performance and reliability, the interconnect process parameters such as high consistency and high reliability bonding of rf channel circuits are controlled. By using the electromagnetic model, the parameters are converted into an equivalent circuit, which is involved in the simulation analysis of the whole circuit and guides the design and test.

  • Microwave cavity encapsulation technology
Microwave circuit packaging requires the following four basic functions: mechanical support and environmental protection, voltage and current path, radio frequency channel signal, control signal input and output path, and heat dissipation path.
Considering the match of the thermal expansion coefficient of the material, the packaging material should have high thermal conductivity. The basic requirements for packaging materials are high modulus of elasticity, low coefficient of thermal expansion, good finish and good planeness.
The assembly density of rf channel components is very high, resulting in high heat per unit area. Although many of the microwave devices section temperature can reach 170 ℃ above, but improper packaging material selection, heat components work can't rapid export, components inside and outside of the temperature gradient is too large, formed in the internal too hot or too hot, worsen components performance, or due to the large thermal stress damage and make the circuit structure.
ECRIM has been engaged in the research and development of metal casing for a long time. They have the largest military metal packaging shell production line in China and have rich experience in the design and manufacture of metal casing. It has the production equipment and technical ability related to the shell design, mechanical processing, glass bead preparation, air tightness sealing, brazing, electroplating, reliability test and so on, which provides reliable guarantee for the design of radio frequency channel structure. Figure 11 is a three-dimensional structure diagram of the Ku band radio frequency component structure designed for a project.
The rf channel module package is designed to adopt air tight package technology, which aims at isolating the environment, preventing pollutant erosion and making internal devices adapt to low pressure and other working conditions. At the same time, meet the electromagnetic compatibility requirements such as shielding.

fig-11
FIG 11

fig-12
FIG 12

3Other microwave circuit products
3.1 Microwave power amplifier
As the final stage of the transmitter, the power amplifier amplifies the modulated frequency band signal to the required power, ensuring that sufficient level signals can be received within the coverage area. Taking the x-band pulse amplifier and s-band continuous wave amplifier developed by 43 as examples (FIG. 12), the main process level and index level of the product are described. Microwave amplifiers can be separately proposed indicators, independent modular design, we can provide user indicators based on the design and manufacturing package.
After adopting the thin-film process (the finished parts adopt bare chips), the volume is greatly reduced, for example, the volume can be changed from 20 x 35 x 10mm3 to 10 x 20 x 10mm3.
Table 10. Electrical characteristics of x-band pulse power amplifier

characteristics

symbol

Condition

Operating frequency range:f= x.1GHz±0.5 GHz;

The input power:7dBm;Work pulse width:1mS

Limit value

Unit

Min

Max

Output power

Pout


33

-

dBm

duty cycle



-

25%




Table 11 S-band continuous wave power amplifier electrical characteristics

characteristics

symbol

Condition

Operating frequency range:f= x.2GHz±0.1 GHz;The input power:10±2dBm

Limit value

Unit

Min

Max

Output power

Pout


37

-

dBm

Gain flatness

ΔG


-

2

dB

Harmonic suppression

H1


65

-

dBc

spurious suppression

S1-1


65

-

dBc

Working current

I


-

2.0

A



3.2 low noise amplifier
Low noise amplifier can be customized to meet the needs of users, providing cutting metal shell packaging finished modules, screw fixation. The size of B1, B2 and B3 low-noise amplifiers is about 15mm x 15mm without filter.
Table 12 technical indicators

features

Limit value

Unit

Min

Max

gain

26

30

dB

Noise factor (room temperature)

0.8

1.2

dB

Port a standing wave

1

2


Working current

60

m



4 Features of microwave products using thin film technology

4.1 High reliability
Due to the adoption of thin film technology, a large number of resistance devices in the original circuit were directly generated on the substrate, which reduced the number of welded components and improved the attenuation accuracy. At the same time, as the base plate of the channel module is directly welded to the cavity, mechanical support and environmental protection are strengthened, the performance of radio frequency grounding is greatly improved, and the reliability index of the module is comprehensively enhanced, which is suitable for mass production. Production in the national army standard production line, the quality level of G, H above.

4.2 Strong operability
Modular design is adopted, and the channel module and system level substrate can be separated for assembly test, which improves the test efficiency. Due to the effective decomposition of the test indicators, the production test can be disassembled into independent groups at the same time.

4.3 Good anti-interference
As a result of the modular design, the channel module is completely closed in a closed independent cavity, which is different from the original multi-laminar plus cavity layout. Therefore, it can better shield the crosstalk of microwave signals and power supply signals from other channels.

4.4 Small volume
After miniaturization, the area of the component is reduced by 1/3 to 1/2, and the interface form is more concise. The signal transmission between each module of the whole machine can be realized only by directly inserting and unplugging the mixed cable. Here are two examples of miniaturized products.


Thin Film photoelectric products
1 Thin film photoelectric substrate
  • Overview
Thin film photoelectric substrate is mainly used in the field of optical communication. The substrate material is mostly aluminum nitride substrate with high thermal conductivity (over 170). The thickness of the substrate is between 0.127-2mm. The multi-layer metal structure is commonly used as TiPtAu membrane system.
  • Main indicators

The fine line

20μm

Line precision

≤ ±5μm

Hole resistance

≤50 mΩ

Size

≤ ±50μm

Special cutting accuracy

≤ ±50μm


Note: product quality meets the requirements of MIL-PRF-38534


FIG 16

2  Pin-fet optical fiber detector
2.1 Overview
Pin-fet optical fiber detector is a kind of optoelectronic device which encapsulates photoelectric detector chip and low-noise amplifier circuit in the same shell. Light signal is irradiated to the photosensitive surface of the detector. Photoelectric diode produces photocurrent input to low-noise amplifier circuit. The low-noise amplifier circuit converts weak current signal into voltage signal and then amplifies output.

2. 2 Product features
High reliability, high sensitivity, wide dynamic range

2.3 Scope of application
optical fiber transmission system, optical fiber gyro, creation placed big, fiber optic sensor

2.4 Circuit model
The circuit model is as follows:
HPF XXXX  X
hpf-xxxx--x

2.5 Different package sizes and photos

type

Type A packaging

TypeB packaging

TypeC packaging

TypeD packaging

category

Metal 14 feet

Metal8 feet

Ceramic 8 feet

size

20.8 mm x12.7 mm x4.67 mm

13.5 mm x12.7 mm x4.67 mm

12.7mm x7.9mmx5.3mm




photo

The leg defines the contrast

WTD, 44 institute, worldcom, podan photoelectric

Tong wei tong, pu Dan photoelectricity

Metal 8 pin

Same as WTD



The commonly used cross resistance is 40K, 200K and 400K. Products with different cross resistance, bandwidth, output voltage and tail fiber requirements can be designed according to users' requirements.

2.6 Performance indicators (package A, B, C, D series)
Maximum rating

ParametersSymbolMaximum rating Unit

positive-supplyVcc      +5.5         V

Negative supplyVee      -5.5          V

Operating temperatureTamb     -55~+85     ℃

Storage temperatureTstg      -55~+85    ℃


Recommended working conditions

Parameters  Symbol  Maximum rating Unit

positive-supplyVcc        +5      V

Negative supplyVee        -5      V


Photoelectric properties
Vcc=+5V,Vss=-5V
performance-indicators-specification-1
performance-indicators-specification-2



1. Be professional in microelectronics wih 50years history.
2. Technology leader,1500+ employees of 50% engineering team.
3. Advance manufacturing capabilities, complete facilities in house( HTCC/LTCC/Thick Film/Thin Film/AlN/DBC/Packages/Furnaces)
4. High Quality Assurance,China National hybrid microelectronics inspection center in ECRIM.
5. Vertical integration capability from raw material, components, devices, modules, equipments to system integration.
6. Competitive price
7. Flexible Delivery, short lead time
8. Fast Response.
9. Customer's design available.