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Microwave substrate components

  • Item NO.:

    Microwave substrate
  • Parameter 1:

    Material: Al2O3.
  • Parameter 2 :

    Accuracy: line width/line spacing accuracy ±2.5um.
  • Parameter 3:

    Metalization: Ti, Ni, Pt, Au, TaN resistors, prefabricated AuSn films, etc.
  • Product Detail

Microwave substrate components

I. Overview
Using semiconductor thin film vacuum evaporation, sputtering, electroplating, photolithography, laser trimming, scribing and other processes, pattern metallization on the surface of ceramic substrates (or special substrates), while integrating resistors, capacitors, inductors, etc., to produce Circuit substrates with specific functions have functions such as electrical connection, physical support, and heat dissipation, and are used in hybrid integrated circuit microwave devices.

2. Product features
High frequency, high precision, high reliability

3. technical indicators
  Material: Al2O3.
  Accuracy: line width/line spacing accuracy ±2.5um.
  Metalization: Ti, Ni, Pt, Au, TaN resistors, prefabricated AuSn films, etc.; meet the requirements of gold wire bonding, SnPb/AuSn/AuSi/AuGe welding, and conductive adhesive bonding.
  Others: Wrap around on the side, through holes (through hole resistance is less than 50 milliohms).


Film system

Typical bottom resistance

50-75-100Ω/□

Typical thickness of transition layer

1000~3000Å

Surface metal thickness

3~8μm

Photolithography

Resolution

0.8μm

Alignment accuracy

±1μm

Double-sided exposure, thick glue exposure

Dicing

Minimum cutting size

0.5mm×0.5mm

Dimensional accuracy

±50μm

Unit alignment accuracy

±5μm

Process capability

2"×2" substrate can produce 800 pieces/week


4. Typical products

Delay lines, chip attenuators, filters, Lange couplers, directional couplers, spiral inductors, etc.

 

5. Application areas

Radar communications, electronic countermeasures, satellite communications, precision surveying and mapping equipment, wireless communications, high-speed sensing and other fields.

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