Model | Parameter 1 | Parameter 2 | Parameter 3 | Download |
---|---|---|---|---|
Power heat sink | Material: AlN/BeO | Accuracy: line width/line spacing accuracy ±5um | Metalization: Ti, Cu, Ni, Pt, Au, prefabricated AuSn film, etc | |
Chip components | Precision : ±0.1% -- ±0.02% | Passivation layer structure : SiO2+Si3N4、SiO2 | Resistance range : 10Ω—1MΩ | |
Highly reliable subs | Material: Al2O3/AlN. | Accuracy: line width/line spacing accuracy ±5um | Metalization: Ti, Ni, Pt, Au, thin film resistors, prefabricated AuSn films, etc | |
Coaxial attenuator | Frequency :DC -18000 | Attenuation: 0.7-1.3 | Max standing wave ratio :1.3 | |
Thin film attenuator | Applicable frequency : DC~ 18GHz | Power : 1W | Standing wave : ≤ 1.2 | |
Microwave substrate | Material: Al2O3. | Accuracy: line width/line spacing accuracy ±2.5um. | Metalization: Ti, Ni, Pt, Au, TaN resistors, prefabricated AuSn films, etc. | |
Thin film Substrate | Metalization: Ti, Ni, Pt, Au, TaN resistance, prefabricated AuSn film, etc | Accuracy: line width/line spacing accuracy ±2.5um. | Material: AlN/Al2O3/multilayer AlN-HTCC/quartz |