Thin Film Integrated Circuits,Thin Film Substrate,Thin Film Process

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High accuracy and reliable thin film products

ECRIM has thin film hybrid integrated circuit through the national army standard production line. It also has the world's advanced magnetron sputtering film forming equipment, high precision laser resistance machine, lithography machine, plasma etching machine, gold wire ball welding machine and so on. Based on thin film process, it designs and develops thin film process products and hybrid integrated signal processing circuits. Over the past 40 years, ECRIM has developed a large number of high-precision and high-quality thin film technology and circuit products for supporting national key engineering projects. Main products are various thin film resistance network, microwave substrate, precision signal processing circuit, high density hybrid integrated circuit and so on.

Thin film process product

Precision thin film resistance: accuracy: ±0.1%～±0.02%
Temperature coefficient: ≤±25 ppm/℃
Thin film ceramic metallization and microwave substrate:
Base material: aluminum oxide, aluminum nitride, quartz etc
Precision: line accuracy ±2.5μm, minimum line width and spacing 20μm
Frequency range: DC～110G

Thin film attenuator: High frequency to 26GHz, low standing wave, high attenuation accuracy
Hybrid integrated signal circuit

Sensor servo circuit: preamplifier, temperature converter, charge amplifier, MEMS accelerometer and MEMS gyroscope.

Isolation type circuit: signal isolation or power supply isolation, isolation amplifier
Precision reference source: small voltage, current reference, the I/F
Photoelectric circuit: hybrid integrated optical fiber photoelectric conversion, transmission module
Microwave circuit: P/L/C/S/X-band channels, medium and low power amplifier
Custom circuit: all kinds of high-precision signal conversion, drive circuit, a dedicated circuit miniaturization

The product quality meets the quality grade and reliability assessment requirements specified in GJB2438A-2002, and the highest quality grade reaches the aerospace grade (K grade).

Thin Film

Model	Parameter 1	Parameter 2	Parameter 3
Power heat sink	Material: AlN/BeO	Accuracy: line width/line spacing accuracy ±5um	Metalization: Ti, Cu, Ni, Pt, Au, prefabricated AuSn film, etc
Chip components	Precision : ±0.1% -- ±0.02%	Passivation layer structure : SiO2+Si3N4、SiO2	Resistance range : 10Ω—1MΩ
Highly reliable subs	Material: Al2O3/AlN.	Accuracy: line width/line spacing accuracy ±5um	Metalization: Ti, Ni, Pt, Au, thin film resistors, prefabricated AuSn films, etc
Coaxial attenuator	Frequency :DC -18000	Attenuation: 0.7-1.3	Max standing wave ratio :1.3
Thin film attenuator	Applicable frequency : DC~ 18GHz	Power : 1W	Standing wave : ≤ 1.2
Microwave substrate	Material: Al2O3.	Accuracy: line width/line spacing accuracy ±2.5um.	Metalization: Ti, Ni, Pt, Au, TaN resistors, prefabricated AuSn films, etc.
Thin film Substrate	Metalization: Ti, Ni, Pt, Au, TaN resistance, prefabricated AuSn film, etc	Accuracy: line width/line spacing accuracy ±2.5um.	Material: AlN/Al2O3/multilayer AlN-HTCC/quartz